Biomolecules and nanostructures
The Optical Sciences group studies the interaction of light and matter. Our current focus is on detection and sensing/imaging with an emphasis on the development of integrated photonics. We are part of Twente University's Department of Science and Technology and member of the MESA+ institute.
High bit rate on-chip nanoamplifiers in Er3+ doped double tungstate
The aim of this project is to develop Er3+ doped photonic wire amplifiers integrated on two of the most promising passive generic integration platforms currently proposed for very large photonic integration, TriPleXTM and silicon-on-insulator (SOI). The material proposed for the amplifier is a potassium double tungstate doped with erbium ions. The high absorption and emission cross-sections of erbium ions in this host material, together with a potentially high erbium concentration and the very high electromagnetic field confinement in the small waveguide cross-section of the photonic wires will enhance the achievable gain per unit length. The amplifiers will be integrated onto TriPleXTM and SOI photonic motherboards.
Bonding and transfer techniques will be developed in this project to permit the transfer of a thin layer of amplifier material onto a passive photonic substrate. This thin layer will then be used to fabricate the photonic wire amplifiers. Low loss coupling schemes to bring both the optical pump and signal to the on-chip amplifier will be developed. High-speed amplification (>Tbps) on a photonic wire amplifier providing a total gain similar to a typical EDFA (10-20 dB), very low noise figure, at a device length of merely a few millimeters and consuming 2-3 mW of pump power will be demonstrated. The proposed amplifiers will constitute a very important milestone towards the practical utilization of photonics in on-chip optical networks.
Fig. 1| (a) Er3+ doped KYW amplifier onto a passive nanophotonic circuit; (b) proposed photonic wire structure with input/output dielectric waveguides.