Integrated Optical Sciences
Biomolecules and nanostructures
The Optical Sciences group studies the interaction of light and matter. Our current focus is on detection and sensing/imaging with an emphasis on the development of integrated photonics. We are part of Twente University's Department of Science and Technology and member of the MESA+ institute.
On-chip tunable, high power, narrow linewidth lasers on a passive photonic platform
Potassium double tungstates are materials largely utlized in the realization of bulk solid state lasers that present high performance characteristics such as high output power, high efficiency and very narrow linewidth. In recent years, work at the University of Twente has demonstrated the utilization of this material to produce very efficient (>80% 1) waveguide lasers exhibiting high output power (> 1W 1) in rare-earth doped potassium double tungstates. The tunability of these devices was also demonstrated by the use of an external grating . Very narrow linewidth lasers (1.7 kHz) have been demonstrated using erbium ions doped into another host material, Al2O3 3. The wavelength of operation of these devices is determined by the rare-earth ion doped into the crystal matrix. Ytterbium (Yb3+) and Thulium (Tm3+) have been studied in recent years for laser operation wavelengths around 1 and 2 μm respectively. Er3+:KY(WO4)2 is currently being studied for on-chip amplification in the C-band.
Despite the excellent characteristics of these waveguide devices, its utilization is limited by the lack of integration with other passive components on the same chip. This is due to the fact that the host material, being crystalline, needs to be grown on a lattice matched substrate. Recent years have seen the development of heterogeneous integration technologies by which different materials are bonded together at the wafer level followed by further processing steps to define the active devices. Preliminary developments at the University of Twente have shown that thin layers of potassium double tungstates can be transferred onto silica-on-silicon substrates4. These thin layers are the base for the fabrication of laser devices proposed here.
Figure: Schematic representation of the module to be developed in this project. Erbium doped KY(WO4)2 will be integrated onto a passive TripleX motherboard in which the required interfaces to the active material as well as the passive circuitry to realize the wavelength stabilization, wavelength selection and delivery of the pump power will be implemented.